APT1201R6BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
This document is a technical datasheet for the APT1201R6BVR, an N-Channel enhancement mode Power MOS V® device. The component features high voltage ratings up to 1200V and continuous drain current of 8A, designed with optimized gate layout for faster switching speeds.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 8 Amps |
| Pulsed Drain Current | 32 Amps |
| Total Power Dissipation | 280 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 1.600 Ohms |
| Package Type | TO-247 Package |
The operating and storage junction temperature range is -55 to 150 C.
Yes, the device features 100% Avalanche Tested capability.