APT10M25BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
This document provides technical specifications and characteristics for the APT10M25BVR, a new generation of high voltage N-Channel enhancement mode power MOSFETs. The device features minimized JFET effect, increased packing density, reduced on-resistance, and optimized gate layout for faster switching speeds.
The datasheet details maximum ratings including 100V drain-source voltage and 75A continuous drain current at 25°C. It also includes static electrical characteristics such as on-state resistance (0.025 Ohms typical), dynamic characteristics like input capacitance, and thermal parameters. The document concludes with package outline dimensions for the TO-247 package.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 75 Amps |
| Gate-Source Voltage (Continuous) | +30 Volts |
| Total Power Dissipation @ Tg = 25°C | 300 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance (Typical) | 0.025 Ohms |
| Package Type | TO-247 |
The device supports a continuous drain current of 75 Amps when the temperature is 25°C.
The total power dissipation is rated at 300 Watts when the temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.