This document provides the maximum ratings, static electrical characteristics, drain-source breakdown voltage, on state drain current, drain-source on-state resistance, zero gate voltage drain current, zero gate voltage drain current, gate-source leakage current, gate threshold voltage information for APT10M30AVR.
This document is a technical datasheet for the Advanced Power Technology APT10M30AVR, a high voltage N-Channel enhancement mode power MOSFET. The device features optimized gate layout to achieve faster switching speeds and reduced on-resistance compared to previous generations.
The datasheet provides comprehensive maximum ratings, static electrical characteristics, dynamic characteristics including capacitance and charge values, source-drain diode specifications, thermal characteristics, and graphical representations of output, transfer, and safe operating area curves.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current | 65 Amps |
| Pulsed Drain Current | 260 Amps |
| Total Power Dissipation | 235 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.030 Ohms |
The maximum continuous drain current is 65 Amps when the temperature is 25°C.
The total power dissipation is rated at 235 Watts when the temperature is 25°C.
The typical drain-source on-state resistance is 0.030 Ohms.