This datasheet provides the maximum ratings, characteristics/test conditions, static electrical characteristics, etc. of APT11058JFLL.
This document is a datasheet for the APT11058JFLL, a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETs. The device features a patented metal gate structure designed for exceptionally fast switching speeds, lower conduction and switching losses, and lower input and Miller capacitance.
| Drain-Source Voltage | 1100 Volts |
|---|---|
| Continuous Drain Current | 18 Amps |
| Total Power Dissipation | 463 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Package Type | SOT-227 |
The device is rated for an operating and storage junction temperature range from -55 to 150 °C.