APT10M25BVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. It minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
This document provides technical specifications for the Advanced APT10M25BVFR, a high voltage N-Channel enhancement mode Power MOSFET. The device utilizes Power MOS V® technology to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current | 75 Amps |
| Pulsed Drain Current | 300 Amps |
| Total Power Dissipation | 300 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | TO-247 |
| Drain-Source On-State Resistance | 0.025 Ohms |
The maximum continuous drain current is 75 Amps when the temperature is 25°C.
The device has a maximum total power dissipation of 300 Watts at 25°C.