This document is the datasheet of APT10M11JVR, which mainly introduces the maximum ratings, static electrical characteristics, dynamic electrical characteristics, and package dimensions of the product.
This document is a datasheet for the Advanced APT10M11JVR, a high voltage N-Channel enhancement mode Power MOSFET. The device utilizes a new technology that minimizes the JFET effect to reduce on-resistance and increase packing density. It is available in the SOT-227 package and features a registered ISOTOP trademark.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current | 144 Amps |
| Pulsed Drain Current | 576 Amps |
| Total Power Dissipation | 450 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Package Type | SOT-227 |
| Drain-Source On-State Resistance | 0.011 Ohms |
The device uses the SOT-227 package.
Yes, the device is 100% avalanche tested.
The maximum junction temperature is 150°C.