This PDF file is the datasheet of APT10M25SVR. It provides detailed information on the static electrical characteristics, rated voltage, rated current, rated power, maximum power dissipation, linear derating factor, operating temperature range, storage temperature range, lead temperature, repetitive avalanche energy, and single pulse avalanche energy.
This document is a technical datasheet for the APT10M25SVR, a high voltage N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device utilizes new technology to minimize the JFET effect, increase packing density, reduce on-resistance, and achieve faster switching speeds through an optimized gate layout.
The datasheet provides maximum ratings for parameters such as drain-source voltage (100V), continuous drain current (75A), and total power dissipation. It also includes static electrical characteristics like on-state resistance and threshold voltage, dynamic characteristics including capacitance and charge values, thermal data, and typical performance curves.
| Drain-Source Voltage | 100 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 75 Amps |
| Pulsed Drain Current | 300 Amps |
| Gate-Source Voltage (Continuous) | +30 Volts |
| Total Power Dissipation @ Tg = 25°C | 300 Watts |
| Drain-Source On-State Resistance | 0.025 Ohms |
| Operating and Storage Junction Temperature Range | -55 to 150 C |
The device uses a D°PAK Package.
Yes, it is 100% Avalanche Tested.