Advanced APT10M19BVR Power MOSFET Datasheet

APT10M19BVR is a power device from APT, with a rated voltage of 100V, a rated current of 75A, a rated resistance of 0.019Ω, a maximum current of 300A, a maximum voltage of 100V, a maximum power of 300W, a maximum temperature of 150°C and a minimum temperature of -55°C.


Advanced APT10M19BVR Power MOSFET Datasheet - cover page
Brand
Advanced
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
69 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
4A9A90C07F3D4156111D791727A58ED0

About this manual

This document is a datasheet for the Advanced APT10M19BVR, a high voltage N-Channel enhancement mode Power MOSFET. The device utilizes Power MOS V® technology to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds.

What's inside

  • Maximum Ratings
  • Static Electrical Characteristics
  • Dynamic Characteristics
  • Source-Drain Diode Ratings
  • Thermal Characteristics
  • Safe Operating Area
  • Package Outline

Specifications

Package TypeTO-247

Frequently asked questions

Is the device avalanche tested?

Yes, the device is 100% avalanche tested.

What is the maximum continuous drain current for the APT10M19BVR at 25°C?

The maximum continuous drain current is 75 Amps when the temperature is 25°C.

What is the maximum total power dissipation rating?

The total power dissipation is rated at 370 Watts when the case temperature is 25°C.

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