APT1201R5BVR 1200V 10A 1.500Ω TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
This document is a technical datasheet for the APT1201R5BVR, an N-Channel enhancement mode Power MOS V® device. The component features high voltage ratings up to 1200V and continuous drain current of 10A at 25°C, utilizing Advanced Power Technology's optimized gate layout for faster switching speeds.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 10 Amps |
| Pulsed Drain Current | 40 |
| Total Power Dissipation @ Tg = 25°C | 370 Watts |
| Operating and Storage Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance @ Vgg = 10V, Iconty | 1.500 Ohms |
| Package Type | TO-247 Package |
The maximum continuous drain current is 10 Amps when the temperature is 25°C.
The total power dissipation is rated at 370 Watts when the temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.