Advanced APT10026L2LL Power MOSFET Datasheet

About this manual

This document is a datasheet for the Advanced APT10026L2LL, a new generation of low loss, high voltage N-Channel enhancement mode power MOSFETs. The device features a patented metal gate structure designed to combine lower conduction and switching losses with exceptionally fast switching speeds.

What's inside

• Maximum Ratings
• Static Electrical Characteristics
• Dynamic Characteristics
• Source-Drain Diode Ratings
• Thermal Characteristics
• Package Outline

Frequently asked questions

What is the maximum continuous drain current for the APT10026L2LL at 25°C?

The maximum continuous drain current is 38 Amps when the temperature is 25°C.

What is the maximum total power dissipation rating for this device?

The total power dissipation is rated at 890 Watts at a temperature of 25°C.

What is the operating and storage junction temperature range?

The device operates and stores within a junction temperature range of -55 to 150 C.