This datasheet is about the static electrical characteristics of APT10026RKVR.
This document is a datasheet for the Advanced APT10026RKVR, a high voltage N-Channel enhancement mode power MOSFET. The device utilizes Power MOS V® technology to minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds. It is available in a popular TO-220 package and is 100% avalanche tested.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, and source-drain diode ratings. Key specifications include a drain-source voltage of 1000 Volts, a continuous drain current of 0.48 Amps, and a drain-source on-state resistance of 26.0 Ohms. The document also includes thermal characteristics and a package outline for the TO-220AC package.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 0.48 Amps |
| Pulsed Drain Current | 1.92 Amps |
| Gate-Source Voltage (Transient) | +40 Volts |
| Total Power Dissipation | 31 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Package Type | TO-220 |
The maximum continuous drain current is 0.48 Amps when the temperature is 25°C.
The device can dissipate up to 31 Watts when the junction temperature is 25°C.
The device operates and stores within a temperature range of -55 to 150 °C.