Advanced Power Technology APT10035JFLL Power MOSFET Datasheet

This datasheet lists the characteristics of APT10035JFLL.


Advanced Power Technology APT10035JFLL Power MOSFET Datasheet - cover page
Brand
Advanced
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
72 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
236679490EBCE15A1A740CA94D94F39F

About this manual

This document is a datasheet for the APT10035JFLL, a 1000V 25A N-Channel enhancement mode Power MOSFET. It utilizes Advanced Power Technology's Power MOS 7™ technology, which combines lower conduction and switching losses with exceptionally fast switching speeds.

What's inside

  • Maximum Ratings
  • Static Electrical Characteristics
  • Dynamic Characteristics
  • Source-Drain Diode Ratings
  • Thermal Characteristics
  • Package Outline

Specifications

Continuous Drain Current25 Amps
Total Power Dissipation520 Watts
Operating Junction Temperature Range-55 to 150 C
Drain-Source On-State Resistance0.350 Ohms
Package TypeSOT-227

Frequently asked questions

What is the continuous drain current at 25°C?

The continuous drain current is 25 Amps at 25°C.

What is the maximum continuous drain current for this MOSFET at 25°C?

The device supports a continuous drain current of 25 Amps when the junction temperature is 25°C.

What is the maximum rated voltage between the drain and source?

The APT10035JFLL has a maximum drain-source voltage rating of 1000 Volts.

What is the typical on-state resistance when the gate-source voltage is 10V?

The drain-source on-state resistance is typically 0.35 Ohms at a gate-source voltage of 10V.

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