ADVANCED POWER TECHNOLOGY APT10035B2LL APT10035LLL handbook

This document is about APT10035 product information, including characteristics, maximum ratings, static characteristics, etc.

Brand: Advanced
Category: Power Management
Document type: Datasheet
Language: English
Pages: 2
File format: PDF
File size: 70 KB
Published: 12 July, 2012
Updated: 30 September, 2023
MD5 checksum: C73998226C06FE26B1B50E4AB879BA33
PDF: ADVANCED POWER TECHNOLOGY APT10035B2LL APT10035LLL handbook PDF

About this manual

This document provides technical specifications for the APT10035B2LL and APT10035LLL, which are low loss, high voltage N-Channel enhancement mode Power MOS 7™ devices. These components feature a patented metal gate structure designed to combine lower conduction and switching losses with exceptionally fast switching speeds.

What's inside

Maximum Ratings
Static Electrical Characteristics
Dynamic Characteristics
Source-Drain Diode Ratings
Thermal Characteristics

Specifications

Total Power Dissipation	690 Watts
Operating Junction Temperature Range	-55 to 150 C
Drain-Source On-State Resistance	0.350 Ohms
Input Capacitance	518 pF

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at 25°C?

The maximum continuous drain current is 28 Amps when the temperature is 25°C.

What is the total power dissipation rating at 25°C?

The total power dissipation is rated at 690 Watts when the temperature is 25°C.

What is the operating and storage junction temperature range?

The device operates and stores within a junction temperature range of -55 to 150 C.

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