This document describes the features and characteristics of a product with model number APT10035JLL, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
This document is a datasheet for the APT10035JLL, a low loss, high voltage N-Channel enhancement mode power MOSFET from Advanced Power Technology. The device features Power MOS 7™ technology with a patented metal gate structure to reduce conduction and switching losses.
| Operating Junction Temperature Range | -55 to 150 C |
|---|---|
| Package Type | SOT-227 |
The maximum continuous drain current is 25 Amps when the temperature is 25°C.
The total power dissipation is rated at 540 Watts when the temperature is 25°C.
The operating and storage junction temperature range is from -55 to 150 C.