APT APT1004RKN/1004R2KN Power MOSFET Data Sheet

Technical datasheet for N-channel enhancement mode high voltage power MOSFETs APT1004RKN and APT1004R2KN, detailing electrical characteristics, thermal…

Brand: Advanced
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 52 KB
Published: 12 July, 2012
Updated: 16 October, 2026
MD5 checksum: B3E1AF1D61D7E0DCEBE0DC4F2C187794
PDF: APT APT1004RKN/1004R2KN Power MOSFET Data Sheet PDF

About this manual

This document provides a comprehensive technical overview of the APT1004RKN and APT1004R2KN N-channel enhancement mode high voltage power MOSFETs. It outlines maximum ratings including drain-source voltage up to 1000V and continuous drain currents ranging from 3.5A to 3.6A.

What's inside

Maximum Ratings
Thermal Characteristics
Static Electrical Characteristics
Dynamic Characteristics
Safe Operating Area
Source-Drain Diode Ratings
Package Dimensions

Specifications

Total Power Dissipation	125 Watts
Operating Temperature Range	-55 to 150 °C

Frequently asked questions

What is the maximum drain-source voltage for these MOSFETs?

The maximum drain-source voltage is 1000 Volts for both the APT1004RKN and APT1004R2KN models.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 3.6 Amps for the APT1004RKN and 3.5 Amps for the APT1004R2KN.

What is the maximum total power dissipation?

The maximum total power dissipation is 125 Watts for both models.

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