APT10050B2VFR and APT10050LVFR are new power MOSFET devices from APT company. The maximum voltage is 1000V, the maximum current is 21A, and the typical resistance is 0.500 ohm.
This document describes the APT10050B2VFR and APT10050LVFR Power MOS V devices, a new generation of high voltage N-Channel enhancement mode power MOSFETs. These devices minimize the JFET effect, increase packing density, and reduce on-resistance while achieving faster switching speeds through optimized gate layout. They are available in T-MAX or TO-264 packages.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 21 Amps |
| Pulsed Drain Current | 84 Amps |
| Total Power Dissipation | 520 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.500 Ohms |
| Gate Threshold Voltage | 2 to 4 Volts |
The maximum continuous drain current is 21 Amps when the junction temperature is 25°C.
The device can dissipate a maximum of 520 Watts at a junction temperature of 25°C.
The operating and storage junction temperature range is from -55 to 150 C.