This is a technical datasheet for APT10040B2VFR, including maximum ratings, static electrical characteristics, etc.
This document provides technical information for the Advanced APT10040B2VFR Power MOSFET, a high voltage N-Channel enhancement mode device. It features low leakage current, fast switching speeds, and a fast recovery body diode. The datasheet covers maximum ratings, static electrical characteristics, dynamic characteristics, and thermal properties.
| Package Type | TO-264 (L) |
|---|
Yes, the device features a fast recovery body diode.
The maximum continuous drain current is 25 amps.