The document describes the features and characteristics of a product, including drain-source breakdown voltage, drain-source on-state resistance, zero gate voltage drain current, gate-source leakage current, and gate threshold voltage.
This document is a datasheet for the APT1003RBLL_SLL, a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETs. The device features significantly lowered conduction and switching losses along with exceptionally fast switching speeds inherent with the manufacturer's patented metal gate structure. It is available in TO-247 or Surface Mount D°PAK packages.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 4 Amps |
| Total Power Dissipation | 139 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Drain-Source On-State Resistance | 3.00 Ohms |
| Input Capacitance | 694 pF |
| Turn-on Delay Time | 8 ns |
| Junction to Case Thermal Resistance | 0.90 °C/W |
The maximum continuous drain current is 4 Amps when the temperature is 25°C.
The total power dissipation is rated at 139 Watts when the case temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 °C.