APT1002RCN 1000V 5.5A 2.00Ω is a high voltage power MOSFET device produced by Advanced Power Technology. It has a maximum drain-source voltage of 1000V, a maximum continuous drain current of 5.5A, and a maximum drain-source on-state resistance of 2.00Ω.
This document provides technical specifications for the APT1002RCN, an N-Channel Enhancement Mode High Voltage Power MOSFET. Key maximum ratings include a Drain-Source Voltage of 1000 Volts and a Continuous Drain Current of 5.5 Amps at 25°C. The device features a typical Drain-Source On-State Resistance of 2.00 Ohms and a Gate Threshold Voltage between 2 and 4 Volts.
The datasheet includes detailed static electrical characteristics, dynamic characteristics such as gate charge and capacitance, and thermal characteristics including junction-to-case resistance. It also presents Safe Operating Area (SOA) curves and typical performance graphs for output, transfer, and capacitance versus voltage and temperature.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 5.5 Amps |
| Pulsed Drain Current | 22 Amps |
| Gate-Source Voltage | +30 Volts |
| Total Power Dissipation | 150 Watts |
| Drain-Source On-State Resistance | 2.00 Ohms |
| Gate Threshold Voltage | 2 to 4 Volts |
The operating and storage junction temperature range is -55 to 150 °C.
The typical Drain-Source On-State Resistance is 2.00 Ohms.