This document provides information on the maximum ratings and technical specifications of the product, including voltage, current, power, etc. It also includes static electrical characteristics of the product, such as leakage current, gate-source voltage, and drain-source current.
This document is a datasheet for the APT10030L2VR, a high voltage N-Channel enhancement mode power MOSFET. The device features a TO-264 MAX package and utilizes Power MOS V® technology to minimize the JFET effect and reduce on-resistance.
The datasheet provides maximum ratings, static electrical characteristics, dynamic characteristics, and thermal characteristics. It also includes a package outline diagram and lists relevant U.S. patents covering the device.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 33 Amps |
| Pulsed Drain Current | 132 Amps |
| Gate-Source Voltage (Continuous) | +30 Volts |
| Drain-Source On-State Resistance | 0.300 Ohms |
| Package Type | TO-264 MAX |
The operating and storage junction temperature range is -55 to 150 °C.
The total power dissipation at 25°C is 830 Watts.