ADVANCED POWER TECHNOLOGY APT1002RBN 1000V 7.0A 2.00 APT1002R4BN 1000V 6.5A 2.40 handbook

This document provides detailed specifications of APT1002RBN and APT1002R4BN, including maximum voltage, current, power, temperature range, etc.

Brand: Advanced
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 4
File format: PDF
File size: 52 KB
Published: 11 July, 2012
Updated: 30 September, 2023
MD5 checksum: E6909FC7AB3784A7B934A1AC8AE5D7FC
PDF: ADVANCED POWER TECHNOLOGY APT1002RBN 1000V 7.0A 2.00 APT1002R4BN 1000V 6.5A 2.40 handbook PDF

About this manual

This document provides a comprehensive technical overview of the APT1002RBN and APT1002R4BN N-channel enhancement mode high voltage power MOSFETs. It outlines maximum ratings, static electrical characteristics, and dynamic parameters for both models.

What's inside

Maximum Ratings
Static Electrical Characteristics
Thermal Characteristics
Dynamic Characteristics
Source-Drain Diode Ratings
Safe Operating Area
Transient Thermal Impedance
Package Outline

Specifications

Drain-Source Breakdown Voltage	1000V
Continuous Drain Current	7.0A (APT1002RBN), 6.5A (APT1002R4BN)
Drain-Source On-State Resistance	2.00 Ω (APT1002RBN), 2.40 Ω (APT1002R4BN)
Operating and Storage Junction Temperature Range	-55 to 150 °C
Package Type	TO-247

Frequently asked questions

What is the maximum drain-source voltage for these MOSFETs?

The maximum drain-source breakdown voltage is 1000V.

What is the continuous drain current for the APT1002RBN model?

The continuous drain current for the APT1002RBN is 7.0A.

What is the on-state resistance of the APT1002R4BN?

The on-state resistance for the APT1002R4BN is 2.40 Ω.

Download PDF (52 KB)