This is a datasheet for APT10030L2VFR
This document provides technical specifications and characteristics for the APT10030L2VFR, a new generation of high voltage N-Channel enhancement mode power MOSFETs. The device features minimized JFET effect, increased packing density, reduced on-resistance, and optimized gate layout for faster switching speeds.
| Package Type | TO-264 MAX |
|---|
The device supports a continuous drain current of 33 Amps when the case temperature is 25°C.
The part can dissipate up to 830 Watts under these specific thermal conditions.
The drain-source on-state resistance is typically 0.300 Ohms when tested at a gate-source voltage of 10V.