The document details the FDP16N50 and FDPF16N50 N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed for high efficiency switched mode power supplies and active power factor correction applications, featuring a 16A continuous drain current and low on-state resistance.
| Drain-Source Voltage | 500 V |
|---|---|
| On-Resistance | 0.38 Ω |
| Gate Charge (Typical) | 32 nC |
| Reverse Transfer Capacitance | 20 pF |
| Operating Temperature Range | -55 to +150 °C |
The typical on-state resistance is 0.38 Ω at VGS = 10 V.
The device operates and stores between -55 and +150 °C.