The FDP14N30 / FDPF14N30 300V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has the features of 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V, low gate charge (typical 18 nC), low Crss (typical 17 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.
This datasheet describes the Fairchild Semiconductor FDP14N30 and FDPF14N30, which are N-channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. These devices feature low gate charge (typical 18 nC), low output capacitance, and fast switching capabilities tailored for high-efficient switched mode power supplies and active power factor correction applications.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical dimensions for both the TO-220 and TO-220F packages. Key specifications include a drain-source voltage of 300V, a continuous drain current of 14A at 25°C, and a power dissipation of 140W at 25°C.
| Drain-Source Voltage (Vdss) | 300 V |
|---|---|
| Continuous Drain Current (Tj=25°C) | 14 A |
| Power Dissipation (Tc=25°C) | 140 W |
| Package Types | TO-220 / TO-220F |
The maximum continuous drain current at a junction temperature of 25°C is 14A.
The device is available in TO-220 and TO-220F packages.
The typical total gate charge (Qg) is 18 nC.