FAIRCHILD FDP10N50U/FDPF10N50UT N-Channel MOSFET handbook

This document describes the features and characteristics of the Fairchild Semiconductor Corporation's FDP10N50U / FDPF10N50UT N-Channel MOSFET, including 500V drain to source voltage, 8A drain current, and 1.05Ω on-state resistance.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 9
File format: PDF
File size: 483 KB
Published: 11 July, 2012
Updated: 28 September, 2023
MD5 checksum: 3807D3076E87CC48029E313ECC086823
PDF: FAIRCHILD FDP10N50U/FDPF10N50UT N-Channel MOSFET handbook PDF

About this manual

This document is a technical datasheet for the Fairchild Semiconductor FDP10N50U and FDPF10NS50UT, which are N-Channel enhancement mode power MOSFETs. These devices utilize proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.

What's inside

Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Typical Performance Characteristics
Package Marking and Ordering Information

Specifications

Drain to Source Voltage	500 V
Gate to Source Voltage	430 V
Single Pulsed Avalanche Energy	320 mJ
Power Dissipation (Tc = 25°C)	128 W
Operating and Storage Temperature Range	-55 to +150 °C

Frequently asked questions

What are the operating and storage temperature ranges for this MOSFET?

The device operates and stores within a temperature range of -55 to +150 °C.

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