This document introduces the FDP12N50U / FDPF12N50UT N-Channel MOSFET product from Fairchild Semiconductor Corporation. The product features low on-state resistance, low gate charge, and low Crss, with fast switching and improved dv/dt capability. It is suitable for high efficient switching mode power supplies and active power factor correction.
This document is a datasheet for the Fairchild FDP12N50U and FDPF12N50UT N-Channel MOSFETs, manufactured using proprietary planar stripe DMOS technology. These devices are designed for high-efficiency switching mode power supplies and active power factor correction applications, offering features such as low gate charge, fast switching, and 100% avalanche testing.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 10 A |
| Operating and Storage Temperature Range | -55 to +150°C |
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
Yes, the devices are 100% avalanche tested.