The FDP12N50F / FDPF12N50FT N-Channel MOSFET is a 500V, 11.5A, 0.7Ω N-channel power field effect transistor that features low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability, and RoHS compliance.
This document is a datasheet for the Fairchild FDP12N50F and FDPF12N50FT N-Channel enhancement mode power MOSFETs. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high-efficiency switching mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current | 11.5 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
| On-Resistance (Typical) | 0.7 Q |
The maximum drain to source voltage rating is 500 V.
The device operates and stores within a temperature range of -55 to +150 °C.