FDP8N50NZ / FDPF8N50NZT UniFETTM N-Channel MOSFET is a high-quality product with 500V, 8A, and 0.85Ω features. It has low on-state resistance, low gate charge, and low Crss. This device is produced using Fairchild's proprietary, planar stripe, DMOS technology, and has advantages such as fast switching, 100% avalanche testing, and ESD improved capability. It is suitable for high efficient switching mode power supplies and active power factor correction applications.
This document is a technical datasheet for the Fairchild FDP8N50NZ and FDPF8N50NZT N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for high efficient switching mode power supplies and active power factor correction applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance characteristics graphs, test circuit diagrams, and mechanical dimensions for the TO-220 and TO-220F packages.
| Drain to Source Voltage | 500 V |
|---|---|
| Gate to Source Voltage | +25 V |
| Continuous Drain Current (25°C) | 8 A |
| Continuous Drain Current (100°C) | 48 A |
| Pulsed Drain Current | 30 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.96 °C/W |
| Thermal Resistance, Case to Sink | Typ. 0.5 °C/W |
| Thermal Resistance, Junction to Ambient | 62.5 °C/W |
| Input Capacitance | 565 pF |
| Output Capacitance | 80 pF |
| Total Gate Charge | 14 nC |
| Turn-On Delay Time | 17 ns |
| Turn-On Rise Time | 34 ns |
| Turn-Off Delay Time | 43 ns |
| Turn-Off Fall Time | 27 ns |
| Maximum Continuous Diode Forward Current | 8 A |
| Maximum Pulsed Diode Forward Current | 30 A |
| Diode Forward Voltage | 1.4 V |
| Reverse Recovery Time | 300 ns |
The maximum drain to source voltage is 500 V.
The continuous drain current at 25°C is 8 A.
The operating and storage temperature range is -55 to +150 °C.
The thermal resistance from junction to case is 0.96 °C/W.