This document describes the features and characteristics of FDP10N50F / FDPF10N50FT N-Channel MOSFET, including 500V voltage, 9A current, 0.85Ω resistance, etc.
This document is a technical datasheet for Fairchild Semiconductor's UniFET N-Channel enhancement mode power field effect transistors, specifically the FDP10N50F and FDPF10N50FT models. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance for high-efficiency switching mode power supplies and active power factor correction applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, thermal characteristics, and typical performance curves. It details specifications such as a 500V drain-to-source voltage rating, 9A continuous drain current, and low gate charge. The document also includes package marking information, ordering details, and mechanical dimensions for the TO-220 and TO-220F packages.
| Drain to Source Voltage | 500 V |
|---|---|
| Pulsed Drain Current | 36 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
| Single Pulsed Avalanche Energy | 364 mJ |
The operating and storage temperature range extends up to +150°C.