This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDP13N50F / FDPF13N50FT N-Channel MOSFET, including 500V drain-to-source voltage, 12A drain current, 0.54Ω on-state resistance, low gate charge, low output capacitance, fast switching speed, 100% avalanche tested, and improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FDP13N50F and FDPF13N50FT N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 12 A |
| Single Pulsed Avalanche Energy | 684 mJ |
| Power Dissipation (Tc = 25°C) | 195 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Static Drain to Source On Resistance (Typ) | 0.54 Ω |
| Total Gate Charge at 10V (Typ) | 39 nC |
The device operates and stores within a temperature range of -55 to +150 °C.