FDPF085N10A is a N-Channel MOSFET produced by Fairchild Semiconductor using PowerTrench process. It features low RDS(on), fast switching speed, low gate charge.
This document is a technical datasheet for the Fairchild Semiconductor FDPFO85N10A, an N-Channel PowerTrench MOSFET. The device features low on-state resistance (typical 8.5mΩ), fast switching speed, and high performance trench technology designed to minimize resistance while maintaining superior switching capabilities.
The datasheet provides comprehensive electrical characteristics, including maximum ratings for drain-to-source voltage (100V) and continuous drain current (40A). It details off-state parameters such as breakdown voltage temperature coefficients and on-state parameters like gate threshold voltage and static drain-to-source on resistance. Additionally, it covers dynamic characteristics including input/output capacitances, total gate charge, and switching times for turn-on and turn-off delays.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Tc = 25°C) | 40 A |
| Pulsed Drain Current | 160 A |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction to Case | 45 °C/W |
| Package Type | TO-220F (Retractable) |
The maximum continuous drain current at a case temperature of 25°C is rated at 40 A.
Yes, the document lists RoHS Compliant as a feature of the FDPFO85N10A.