This document describes the features and characteristics of FDP15N65 / FDPF15N65 650V N-Channel MOSFET, including 15A current, 650V voltage, low gate charge, fast switching speed, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDP15N65 and FDPF15N65 devices. These are 650V N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. The devices feature low on-state resistance (RDS(on) = 0.44 Ω @ VGS = 10 V), low gate charge, and fast switching capabilities.
| Drain-Source Voltage (VDSS) | 650 V |
|---|---|
| Continuous Drain Current (TC = 25 °C) | 15 A |
| On-Resistance (RDS(on)) | 0.44 Ω @ VGS = 10 V |
| Package Type | TO-220 / TO-220F |
The device supports a continuous current of 15 A at 25 °C and 9.5 A at 100 °C.
The absolute maximum drain-source voltage for this MOSFET is 650 V.