FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DMOS technology, which has low on-state resistance, superior switching performance, high energy pulse withstand capability and fast switching characteristics. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild FDP10N60ZU and FDPF10N60ZUT series of N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
| Pulsed Avalanche Energy | 100 mJ |
|---|
The devices are available in TO-220 and TO-220F packages.
The device supports a continuous drain current of 9 A when the junction temperature is 25°C.
The device is rated for an operating and storage temperature range from -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 100 mJ.