This is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, fast switching speed, and high energy pulse capability in avalanche and commutation mode. It is suitable for high efficient switching mode power supplies and active power factor correction.
The document describes the Fairchild FDP16N50U and FDPF16N50UT N-Channel enhancement mode power field effect transistors. These devices utilize proprietary DMOS technology to minimize on-state resistance and provide superior switching performance, making them suitable for high-efficiency switching mode power supplies and active power factor correction applications.
The datasheet provides comprehensive technical data including maximum ratings, electrical characteristics (such as breakdown voltage, on-resistance, and capacitance), thermal properties, and typical performance curves. It also includes mechanical dimensions for the TO-220 and TO-220F packages.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±30 V |
| Continuous Drain Current (TC = 25°C) | 15 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance RDS(on) Typ. | 0.37 Ω |
| Gate Charge (Typ.) | 32 nC |
| Reverse Transfer Capacitance Crss (Typ.) | 20 pF |
| Operating Temperature Range | -55 to +150°C |
The typical RDS(on) is 0.37 Ω at VGS = 10V and ID = 7.5A.
Yes, the document states that these devices are RoHS compliant.
The single pulsed avalanche energy (EAS) is 610 mJ and repetitive avalanche energy (EAR) is 20 mJ.