FDP5N50 / FDPF5N50T is an N-Channel MOSFET with a voltage of 500V, a current of 5A, and an RDS(on) of 1.4Ω. It has low gate charge and low Crss, with fast switching speed and improved dv/dt capability. It is suitable for high efficient switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor Corporation FDP5N50 and FDPF5N50T devices. These are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain to source voltage of 500V and continuous drain current of 5A at 25°C. It details dynamic parameters like gate charge (Typ. 11nC) and switching times, along with thermal resistance values for junction-to-case and case-to-sink applications.
| Drain to Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 5 A |
| Gate Charge (Typical) | 11 nC |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.4 °C/W |
The maximum continuous drain current is 5 A when the case temperature is 25°C.
These devices operate and store in a temperature range from -55 to +150 °C.
The maximum drain-to-source voltage rating is 500 V.