FDP3N50NZ / FDPF3N50NZ N-Channel MOSFET datasheet provides product information, such as product features, specifications, dimensions, and pictures, in English
This document is a technical datasheet for the Fairchild Semiconductor Corporation UniFET-II series N-Channel enhancement mode power field effect transistors. The specific models covered are the FDP3N50NZ (TO-220) and the FDPF3N50NZ (TO-220F potted). These devices utilize proprietary planar stripe DMOS technology designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. They are well-suited for efficient switching mode power supplies and active power factor correction applications.
| Drain to Source Voltage (Vdss) | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 3 A |
| Single Pulsed Avalanche Energy | 113 mJ |
| Power Dissipation (Tc = 25°C) | 54 W / 27 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
Yes, the document lists RoHS Compliant as one of the key features.
The device can withstand a single pulsed avalanche energy of 113 mJ.
The device operates and stores safely within a temperature range of -55 to +150 °C.