FDP4N60NZ / FDPF4N60NZ is an N-channel enhancement mode power field effect transistor with 600V voltage, 3.8A current, and 2.5Ω resistance. It features low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability, and ESD improved capability. The product is RoHS compliant.
This document is a datasheet for the Fairchild FDP4N60NZ and FDPF4N60NZ N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for efficient switching mode power supplies and active power factor correction applications. The FDP4N60NZ is available in the TO-220 package, while the FDPF4N60NZ is available in the TO-220F package.
The maximum continuous drain current is 3.8 A when the junction temperature is 25°C.
The maximum drain-to-source voltage rating is 600 V.