FDP17N60N / FDPF17N60NT N-Channel MOSFET is a 600V, 17A, 0.34 ohm power field effect transistor. This product has RDS(on) = 0.29ohm (Typ.)@ VGS = 10V, ID = 8.5A, low gate charge (Typ. 48nC), low Crss (Typ. 23pF), fast switching, 100% Avalanche Tested, Improved dv/dt capability, RoHS compliant and other features.
This document is a datasheet for the Fairchild FDP17N60N and FDPF17N60NT N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary, planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well suited for high efficient switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 17 A |
| Power Dissipation (Tc = 25°C) | 3245 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.51 °C/W |
The operating and storage temperature range is from -55 to +150 °C.