This document describes the features and characteristics of the FDP5N50F / FDPF5N50FT N-Channel MOSFET product released in May 2012, including a drain-to-source voltage of 500V, a drain current of 4.5A, and an on-state resistance of 1.55 ohms.
This document is a technical datasheet for the Fairchild Semiconductor FDP5N50F and FDPF5N50FT devices, which are N-Channel enhancement mode power field effect transistors (MOSFETs). These components utilize proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance. They are specifically tailored for high-efficiency switched-mode power supplies and active power factor correction applications.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 4.5 A |
| On-State Resistance (Typ.) | 1.25 Ω |
| Gate Charge (Typ.) | 11 nC |
| Reverse Transfer Capacitance (Typ.) | 5 pF |
| Operating Temperature Range | -55 to +150°C |
The maximum continuous drain current is 4.5 A when the case temperature is 25°C.
The device operates between -55°C and +150°C, with a maximum lead soldering temperature of 300°C.
The maximum drain-to-source breakdown voltage is 500 V.