FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET is a 500V, 4.2A, 1.75Ω product with RDS(on) = 1.57Ω (Typ.) @ VGS = 10V, ID = 2.1A, Low Gate Charge (Typ. 9nC), Low Crss (Typ. 4pF), Fast Switching, 100% Avalanche Tested, Improved dv/dt Capability, ESD Improved Capability, RoHS Compliant features.
This document provides the specifications and characteristics of the FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET, including maximum ratings, thermal characteristics, and electrical parameters. The devices utilize Fairchild's proprietary UniFET-II technology to minimize on-state resistance and provide superior switching performance.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±25 V |
| Continuous Drain Current (TC = 25°C) | 4.2 A |
| Pulsed Drain Current (IDM) | 16 A |
| On-Resistance (RDS(on)) Typ. | 1.57 Ω |
| Total Gate Charge (Qg) | 9 nC |
| Reverse Transfer Capacitance (Crss) Typ. | 4 pF |
The operating and storage temperature range is -55 to +150°C.
The devices are available in TO-220 (FDP Series) and TO-220F potted (FDPF Series) packages.