This document describes the features and characteristics of the FDP39N20 / FDPF39N20 200V N-Channel MOSFET, including 39A current, 0.066Ω RDS(on), low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability.
The document describes the Fairchild FDP39N20 and FDPF39N20, which are 39A, 200V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well suited for high efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 39 A |
| Pulsed Drain Current | 156 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 860 mJ |
| Power Dissipation (Tj = 25°C) | 251 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.5 °C/W |
| Drain-Source Breakdown Voltage | 200 V |
| Gate Threshold Voltage | 3.0 - 5.0 V |
| Total Gate Charge | 38 nC (Typ) |
The maximum continuous drain current at a junction temperature of 25°C is 39 A.
The operating and storage temperature range is from -55°C to +150°C.
The single pulsed avalanche energy rating is 860 mJ.