FDP5N50NZU/FDPF5N50NZU N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Product features include: RDS(on) = 1.7Ω (Typ.)@ VGS = 10V, ID = 1.95A, low gate charge (Typ. 9nC), low Crss (Typ. 4pF), fast switching, 100% avalanche tested, improved dv/dt capability, improved ESD capability, RoHS compliant.
This document is a datasheet for the Fairchild FDP5N50NZU and FDPF5N50NZU N-Channel enhancement mode power field effect transistors (MOSFETs). These devices utilize Fairchild's proprietary UniFET-II™ technology, which is designed to minimize on-state resistance and provide superior switching performance for high-efficiency switching mode power supplies and active power factor correction applications.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, thermal characteristics, and typical performance curves. It details specifications such as a 500V drain-to-source voltage rating, continuous drain current of 3.9A, and low gate charge. The document also includes package dimensions for the TO-220 and TO-220F packages and test circuit diagrams for various parameters like gate charge and diode recovery.
| Drain to Source Voltage | 500 V |
|---|---|
| Pulsed Drain Current | 15 A |
| Power Dissipation | 78 W |
The devices are available in TO-220 and TO-220F packages.