This document is a datasheet for the CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types of silicon switching diodes that are manufactured by the epitaxial planar process and are designed for applications requiring high voltage capability.
This document is a datasheet for the Central Semiconductor Corp. CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S series of silicon switching diodes. These components are manufactured using an epitaxial planar process and are designed for applications requiring high voltage capability.
| Continuous Reverse Voltage (VR) | 200 V / 240 V |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 250 V / 300 V |
| Continuous Forward Current (IF) | 250 mA / 225 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Junction Temperature (Tj, Tstg) | -65 to +150 °C |
| Thermal Resistance (QJA) | 357 °C/W |
The maximum power dissipation is 350 mW.
The operating and storage junction temperature range is -65 to +150 °C.