The CENTRAL SEMICONDUCTOR CMPD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability.
The CMPD2005S is a dual, in series high voltage silicon switching diode manufactured by Central Semiconductor. It is designed for applications requiring high voltage capability and is packaged in a SOT-23 surface mount case.
The document provides maximum ratings, electrical characteristics per diode, and mechanical outline dimensions. Key specifications include a continuous reverse voltage of 300 V and a peak repetitive reverse voltage of 350 V.
| Continuous Reverse Voltage | 300 V |
|---|---|
| Peak Repetitive Reverse Voltage | 350 V |
| Continuous Forward Current | 225 mA |
| Power Dissipation | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Package Type | SOT-23 |
It contains two high voltage silicon switching diodes manufactured in a SOT-23 surface mount package.
The device has a maximum continuous reverse voltage rating of 300 V.
The junction temperature ranges from -65 to +150 °C for operation and storage.