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Central CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S handbook
This document is a datasheet for the Central Semiconductor Corp. CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S series of silicon switching diodes. These components are manufactured using an epitaxial planar process and are designed for applications requiring high voltage capability.
Read onlineCentral Semiconductor CMPD2004S specifications
| Continuous Reverse Voltage (VR) | 200 V / 240 V |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 250 V / 300 V |
| Continuous Forward Current (IF) | 250 mA / 225 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Junction Temperature (Tj, Tstg) | -65 to +150 °C |
| Thermal Resistance (QJA) | 357 °C/W |
Source: Central CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S handbook
All Central Semiconductor CMPD2004S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation for these diodes?
The maximum power dissipation is 350 mW.
From: Central CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S handbook
What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -65 to +150 °C.
From: Central CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S handbook
What is the maximum continuous reverse voltage for the CMPD2004?
The maximum continuous reverse voltage is 200 V.
From: Central Semiconductor Corp. CMPD2003/CMPD2004/CMPD2004S High Voltage Switching Diode Datasheet
What is the maximum power dissipation for these diodes?
The maximum power dissipation is 350 mW.
From: Central Semiconductor Corp. CMPD2003/CMPD2004/CMPD2004S High Voltage Switching Diode Datasheet