The document describes the CENTRAL SEMICONDUCTOR CMPD5001 series silicon switching diodes, which are designed for switching inductive load applications requiring extremely high current capability. The product features low reverse current, high forward current, and high current capability.
This document describes the Central Semiconductor Corp. CMPD5001 series types, which are silicon switching diodes manufactured by the epitaxial planar process. These components are designed for switching inductive load applications requiring extremely high current capability and are available in SOT-23 case configurations.
| Continuous Reverse Voltage (VR) | 120 V |
|---|---|
| Continuous Forward Current (IF) | 400 mA |
| Peak Repetitive Forward Current (IFRM) | 800 mA |
| Power Dissipation (Pp) | 350 mW |
| Junction Temperature Range (Tj) | -65 to +150 °C |
The diode has a maximum power dissipation rating of 350 mW.