This document is the datasheet of CMPD4448, which mainly introduces its maximum ratings, electrical characteristics, etc.
The document describes the Central Semiconductor CMPD4448, an ultra-high speed silicon switching diode manufactured using the epitaxial planar process. It is housed in an epoxy molded surface mount package (SOT-23) and is designed for high speed switching applications. The marking code for the device is AAD.
The datasheet provides maximum ratings for parameters such as reverse voltage, forward current, and power dissipation. It also lists electrical characteristics including breakdown voltage, reverse current, forward voltage drop, and capacitance. Mechanical dimensions are provided in inches and millimeters.
| Continuous Reverse Voltage | 75 V |
|---|---|
| Peak Repetitive Reverse Voltage | 100 V |
| Continuous Forward Current | 250 mA |
| Peak Repetitive Forward Current | 250 mA |
| Forward Surge Current (tp=1 jsec) | 4000 mA |
| Forward Surge Current (tp=1 sec) | 1000 mA |
| Power Dissipation | 350 mW |
| Operating and Storage Temperature | -65 to +150 °C |
| Package Type | SOT-23 |
The marking code is AAD.
The maximum continuous reverse voltage is 75 V.
The capacitance is 4.0 pF at Va=0 and f=1 MHz.