The CMPF4391 is a N-channel silicon field effect transistor manufactured by Central Semiconductor Corp. using the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications.
This document is a technical datasheet for the CMPF4391, CMPF4392, and CMPF4393 series of N-Channel Silicon Field Effect Transistors. These devices are manufactured using an epitaxial planar process and are epoxy molded in SOT-23 surface mount packages designed for switching applications.
The datasheet provides maximum ratings, electrical characteristics, and typical performance data for the three specific models (CMPF4391, CMPF4392, and CMPF4393). It includes specifications such as drain-gate voltage, gate-source voltage, power dissipation, junction temperature, and various capacitance values at different frequencies.
The maximum power dissipation is 350 mW.
The operating and storage junction temperature ranges from -65 to +150 °C.