The document describes the Central Semiconductor CMPD3003 series types as silicon switching diodes manufactured by the epitaxial planar process. These devices are designed for switching applications requiring extremely low leakage current.
Available configurations include single (CMPD3003), dual common anode (CMPD3003A), dual common cathode (CMPD3003C), and dual in series (CMPD3003S) variants. The datasheet provides maximum ratings, electrical characteristics, and a mechanical outline for the SOT-23 case.
| Continuous Reverse Voltage (VR) | 180 V |
|---|---|
| Average Rectified Current (Io) | 200 mA |
| DC Forward Current (Ip) | 600 mA |
| Peak Repetitive Forward Current (IFRM) | 700 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
CMPD3003 is marked LLO, CMPD3003A is LLA, CMPD3003C is LLC, and CMPD3003S is LLS.
The maximum reverse leakage current (Ir) is 4.0 nA when VR=125V.