This datasheet is about the specification parameters of CMPD6001 series products
The document describes the CENTRAL SEMICONDUCTOR CMPD6001 series types as silicon switching diodes manufactured by the epitaxial planar process. These devices are designed for switching applications requiring extremely low leakage and are available in SOT-23 case configurations with single, dual common anode, dual common cathode, or dual in-series arrangements.
The datasheet provides maximum ratings including a continuous reverse voltage of 75 V and a peak repetitive forward current of 250 mA. It also lists electrical characteristics such as reverse leakage current (IR) at various test conditions and forward voltage drops, along with mechanical outline dimensions for the SOT-23 package.
| Continuous Reverse Voltage (VR) | 75 V |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 100 V |
| Continuous Forward Current (IF) | 250 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
| Package Type | SOT-23 CASE |
The maximum forward surge current (lESm) for a duration of 1 second is 1000 mA.
The maximum continuous reverse voltage is rated at 75 V.
Each diode has a maximum power dissipation of 350 mW.
The junction and storage temperatures operate between -65 to +150 °C.